Specific Process Knowledge/Etch/ICP Metal Etcher
Etching of nanostructures in silicon using the ICP Metal Etcher or DRIE Pegasus
Recipe | Sinano3.0 | Sinano3.1 | Sinano3.2 | Sinano3.3 | Sinano3.4 | Sinano4.0 | Sinano3.5 | Sinano3.6 | Sinano3.3 | Sinano3.7 |
---|---|---|---|---|---|---|---|---|---|---|
Cl2 (sccm) | 0 | 0 | 0 | 0 | 0 | 20 | 15 | 15 | 0 | |
BCl3 (sccm) | 5 | 3 | 5 | 5 | 5 | 0 | 5 | 5 | 5 | |
HBr (sccm) | 15 | 17 | 15 | 15 | 15 | 0 | 0 | 0 | 15 | |
Coil power (W) | 900 (Load) | 900 (Forward) | 900 (Forward) | 900 (Forward) | 900 (Forward) | 900 (Load) | 900 (Load) | 900 (Forward) | 900 (Forward) | |
Platen power (W) | 50 | 50 | 60 | 75 | 90 | 60 | 60 | 60 | 75 | |
Pressure (mtorr) | 2 | 2 | 2 | 2 | 2 | 2 | 5 | 10 | 2 | |
Temperature (oC) | 20 | 20 | 20 | 20 | 20 | 20 | 20 | 20 | 20 | 50 |
Process time (s) | 150 | 180 | 120 | 180 | 120 | 90 | 120 | 180 | 300 | |
Nominal line width | Etched depths (nm) | |||||||||
30 nm | 198 | 231 | 147 | 214 | 163 | 227 | 185 | 170 | 295 | |
60 nm | 256 | 308 | 181 | 305 | 229 | 253 | 191 | 185 | 411 | |
90 nm | 259 | 335 | 195 | 342 | 255 | 251 | 222 | 253 | 566 | |
120 nm | 277 | 346 | 203 | 357 | 262 | 257 | 221 | 278 | 600 | |
150 nm | 269 | 341 | 205 | 369 | 265 | 262 | 225 | 280 | 647 | |
Nominal line width | Etch rates in trenches (nm/min) | |||||||||
30 nm | 79 | 77 | 74 | 71 | 82 | 151 | 93 | 57 | 59 | |
60 nm | 102 | 103 | 91 | 102 | 115 | 169 | 96 | 62 | 82 | |
90 nm | 104 | 112 | 98 | 114 | 128 | 167 | 111 | 84 | 113 | |
120 nm | 111 | 115 | 102 | 119 | 131 | 171 | 111 | 93 | 120 | |
150 nm | 108 | 114 | 103 | 123 | 133 | 175 | 113 | 93 | 129 | |
zep mask parameters | ||||||||||
start (end) | 110 (64) | 178 (96) | 180 (110) | 180 (64) | 180 (72) | 110 (43) | 110 (34) | 180 (64) | 348 (53) | |
zep etch rate (nm/min) | 18 | 27 | 35 | 39 | 54 | 45 | 38 | 39 | 59 |