Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch
Recipe | nano1.0 | nano1.1 | nano1.2 | nano1.3 | |
---|---|---|---|---|---|
Tool | Pegasus | Pegasus | Pegasus | Pegasus | |
C4F8 (sccm) | 52 | 52 | 52 | 52 | |
SF6 (sccm) | 38 | 38 | 38 | 38 | |
O2 (sccm) | 0 | 0 | 0 | 0 | |
Coil power (W) | 800 (forward) | 600 (forward) | 800 (forward) | 600 (forward) | |
Platen power (W) | 50 | 50 | 50 | 40 | |
Pressure (mtorr) | 4 | 4 | 4 | 4 | |
Temperature (degs C) | 10 | 10 | -10 | -10 | |
Process time (s) | 120 | 120 | 120 | 120 | |
Nominal line width | Etched depths (nm) | ||||
30 nm | |||||
60 nm | |||||
90 nm | |||||
120 nm | |||||
150 nm | |||||
Nominal line width | Etch rates in trenches (nm/min) | ||||
30 nm | |||||
60 nm | |||||
90 nm | |||||
120 nm | |||||
150 nm | |||||
Etch rates in zep resist (nm/min) | |||||
One point on wafer | |||||
Images | Images | Images | Images | Images |
The nanoetch