Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch
| Recipe | nano1.0 | ||
|---|---|---|---|
| Tool | Pegasus | ||
| C4F8 (sccm) | 52 | ||
| SF6 (sccm) | 38 | ||
| O2 (sccm) | 0 | ||
| Coil power (W) | 800 (forward) | ||
| Platen power (W) | 50 | ||
| Pressure (mtorr) | 4 | ||
| Process time (s) | 120 | ||
| Nominal line width | Etched depths (nm) | ||
| 30 nm | |||
| 60 nm | |||
| 90 nm | |||
| 120 nm | |||
| 150 nm | |||
| Nominal line width | Etch rates in trenches (nm/min) | ||
| 30 nm | |||
| 60 nm | |||
| 90 nm | |||
| 120 nm | |||
| 150 nm | |||
| Etch rates in zep resist (nm/min) | |||
| One point on wafer | |||
| Images | Images | ||
The nanoetch