File:WF 2C3feb2011-120.jpg

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Revision as of 16:15, 24 March 2011 by Jml (talk | contribs) (Etching of nanostructures in Si using DRIE-Pegasus: nano1.0 recipe, Run ID 1801, time 120 secs, SF6 38, C4F8 52, 4mtorr, 800/50 coil/platen, 10 degs.)
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Etching of nanostructures in Si using DRIE-Pegasus: nano1.0 recipe, Run ID 1801, time 120 secs, SF6 38, C4F8 52, 4mtorr, 800/50 coil/platen, 10 degs.

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current16:15, 24 March 2011Thumbnail for version as of 16:15, 24 March 20111,024 × 768 (244 KB)Jml (talk | contribs)Etching of nanostructures in Si using DRIE-Pegasus: nano1.0 recipe, Run ID 1801, time 120 secs, SF6 38, C4F8 52, 4mtorr, 800/50 coil/platen, 10 degs.

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