Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch

Recipe	nano1
Tool	Pegasus
C4F8 (sccm)	52
SF6 (sccm)	38
O2 (sccm)	15
Coil power (W)	800 (forward)
Platen power (W)	50
Pressure (mtorr)	4
Process time (s)	150
Nominal line width	Etched depths (nm)
30 nm	198
60 nm	256
90 nm	259
120 nm	277
150 nm	269
Nominal line width	Etch rates in trenches (nm/min)
30 nm	79
60 nm	102
90 nm	104
120 nm	111
150 nm	108
	Etch rates in zep resist (nm/min)
zep	18