Specific Process Knowledge/Thin film deposition/Deposition of Niobium Titanium Nitride

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Deposition of Niobium Titanium Nitride

Deposition of NbTiN can be done by reactive sputtering using NbTi target.

The preferred tool for this application is the Cluster-based multi-chamber high vacuum sputtering deposition system, commonly referred to as the 'Cluster Lesker.' The operating process is thoroughly documented and described in detail.:

At the moment (October 2023) we have a 4-inch NbTi target for PC3 Src1 and a 3-inch NbTi target for Sputter-System Lesker (Old Lesker).

Comparison of LPCVD, PECVD, and sputter systems for silicon nitride deposition

Sputter-System Metal-Nitride(PC3) Lesker sputter system
Generel description
  • Pulsed DC reactive sputtering
  • Reactive HIPIMS (high-power impulse magnetron sputtering) (require 3-inch target)
  • Reactive DC sputtering (not tested)
Stoichiometry
  • NbxTyN (Sputter-System Metal-Nitride(PC3))

Tunable composition

  • Unknown
Film thickness
  • Limited by process time.
  • Deposition rate (0.18 nm/s) likely faster than Sputter-System (Lesker)
  • Limited by process time.
  • Deposition rate unknown
Process temperature
  • Up to 600 °C
  • Up to 400 °C
Step coverage
  • Some step coverage possible
  • Some step coverage possible but amount unknown
Film quality
  • Deposition on one side of the substrate
  • Properties including tunable stoichiometry (requires process development)
  • Deposition on one side of the substrate
  • Unknown quality
  • Likely O-contamination
Batch size
  • Many smaller samples
  • Up to 10*100 mm or 150 mm wafers
  • Several smaller samples
  • 1-several 50 mm wafers
  • 1*100 mm wafers
  • 1*150 mm wafer
Allowed materials
  • Almost any as long as they do not outgas and are not very toxic, see cross-contamination sheets
  • Almost any as long as they do not outgas and are not very toxic, see cross-contamination sheets





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