Specific Process Knowledge/Thin film deposition/Deposition of Niobium Titanium Nitride

Feedback to this page: click here

Unless otherwise stated, this page is written by DTU Nanolab internal

Deposition of Niobium Titanium Nitride

Deposition of NbTiN can be done by reactive sputtering using NbTi target.

The preferred tool for this application is the Cluster-based multi-chamber high vacuum sputtering deposition system, commonly referred to as the 'Cluster Lesker.' The operating process is thoroughly documented and described in detail.:

• Deposition Deposition of Niobium Titanium Nitride using reactive p-DC sputtering

At the moment (October 2023) we have a 4-inch NbTi target for PC3 Src1 and a 3-inch NbTi target for Sputter-System Lesker (Old Lesker).

Comparison of LPCVD, PECVD, and sputter systems for silicon nitride deposition

	Sputter-System Metal-Nitride(PC3)	Lesker sputter system
Generel description	Pulsed DC reactive sputtering Reactive HIPIMS (high-power impulse magnetron sputtering) (require a different target)	Reactive DC sputtering (not tested)
Stoichiometry	NbxTyN (Sputter-System Metal-Nitride(PC3)) Tunable composition	Unknown
Film thickness	Limited by process time. Deposition rate (0.18 nm/s) likely faster than Sputter-System (Lesker)	Limited by process time. Deposition rate unknown
Process temperature	Up to 600 °C	Up to 400 °C
Step coverage	Some step coverage possible	Some step coverage possible but amount unknown
Film quality	Deposition on one side of the substrate Properties including tunable stoichiometry (requires process development)	Deposition on one side of the substrate Unknown quality Likely O-contamination
Batch size	Many smaller samples Up to 10*100 mm or 150 mm wafers	Several smaller samples 1-several 50 mm wafers 1*100 mm wafers 1*150 mm wafer
Allowed materials	Almost any as long as they do not outgas and are not very toxic, see cross-contamination sheets	Almost any as long as they do not outgas and are not very toxic, see cross-contamination sheets