Specific Process Knowledge/Etch/ICP Metal Etcher

Etching of nanostructures in silicon using the ICP Metal Etcher

	Sinano3.0	Sinano3.1	Sinano3.2	Sinano3.0	Sinano3.4	Sinano4.0	Sinano3.5	Sinano3.6
Cl2 (sccm)	0	0	0	0	0	20	15	15
BCl3 (sccm)	5	3	5	5	5	0	5	5
HBr (sccm)	15	17	15	15	15	0	0	0
Coil power (W)	900	900	900	900	900	900	900	900
Platen power (W)	50	50	60	75	90	60	60	60
Process time (s)	150	180	120	180	120	90	120	180

• 1 - the first nanoetch

• Sinano3.0

• Sinano3.1

• Sinano3.2

• Sinano3.3

• Sinano3.4

• Sinano3.5

• Sinano3.6

• Sinano4.0