Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/SiO2 Etch/Cr mask

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Unless otherwise stated, all content in this section was done by Berit Herstrøm, DTU Nanolab

Start parameters, variations noted in the gallery headline	Recipe name: no 10 with lower platen power
Coil Power [W]	2500
Platen Power [W]	200
Platen temperature [oC]	20
H2 flow [sccm]	25.6
C4F8 flow [sccm]	25.6
He flow [sccm]	448.7
Pressure	Fully open APC valve (8-9 mTorr)
Electromagnetic coils (EM) 'outer coil' / 'inner coil'	'2 A' / '30 A'

• EM tests with Cr mask on full wafer 6 min etch
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• EM tests with Cr mask on wafer piece on Si carrier 6 min etch
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• EM tests with Cr mask on full wafer 6 min etch
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• EM tests with Cr mask on full wafer 6 min etch
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