File:WF2B-6-feb06-2011-090nm.jpg

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Revision as of 14:52, 15 March 2011 by Jml (talk | contribs) (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.6 recipe, Run ID 441 and 442, time 180 secs, Cl2 15, BCl3 5, 2mtorr, 900/60 coil/platen, 20 degs.)
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Etching of nanostructures in Si using the ICP metal etcher: Sinano3.6 recipe, Run ID 441 and 442, time 180 secs, Cl2 15, BCl3 5, 2mtorr, 900/60 coil/platen, 20 degs.

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current14:52, 15 March 2011Thumbnail for version as of 14:52, 15 March 20111,024 × 768 (175 KB)Jml (talk | contribs)Etching of nanostructures in Si using the ICP metal etcher: Sinano3.6 recipe, Run ID 441 and 442, time 180 secs, Cl2 15, BCl3 5, 2mtorr, 900/60 coil/platen, 20 degs.

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