File:WF 2B4 feb06 2011-120.jpg

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Revision as of 14:47, 15 March 2011 by Jml (talk | contribs) (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.3 recipe, Run ID 430 and 432, time 180 secs, BCl3 5, HBr 15, 2mtorr, 900/75 coil/platen, 20 degs.)
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Etching of nanostructures in Si using the ICP metal etcher: Sinano3.3 recipe, Run ID 430 and 432, time 180 secs, BCl3 5, HBr 15, 2mtorr, 900/75 coil/platen, 20 degs.

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current14:47, 15 March 2011Thumbnail for version as of 14:47, 15 March 20111,024 × 768 (264 KB)Jml (talk | contribs)Etching of nanostructures in Si using the ICP metal etcher: Sinano3.3 recipe, Run ID 430 and 432, time 180 secs, BCl3 5, HBr 15, 2mtorr, 900/75 coil/platen, 20 degs.

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