File:WF 2B2 feb06 2011-120.jpg
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Etching of nanostructures in Si using the ICP metal etcher: Sinano3.1 recipe, Run ID 424 and 425 and 427, time 180 secs, BCl3 3, HBr 17, 2mtorr, 900/50 coil/platen, 20 degs.
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current | 14:43, 15 March 2011 | 1,024 × 768 (80 KB) | Jml (talk | contribs) | Etching of nanostructures in Si using the ICP metal etcher: Sinano3.1 recipe, Run ID 424 and 425 and 427, time 180 secs, BCl3 3, HBr 17, 2mtorr, 900/50 coil/platen, 20 degs. |
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