File:WF 2A-5 feb06 2011-030.jpg

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Revision as of 14:38, 7 March 2011 by Jml (talk | contribs) (Etching of nanostructures in Si using the ICP metal etcher: Sinano4.0 recipe, Run ID 435 and 436, time 90 secs, Cl2 20, 2mtorr, 900/60 coil/platen, 20 degs.)
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Etching of nanostructures in Si using the ICP metal etcher: Sinano4.0 recipe, Run ID 435 and 436, time 90 secs, Cl2 20, 2mtorr, 900/60 coil/platen, 20 degs.

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current14:38, 7 March 2011Thumbnail for version as of 14:38, 7 March 20111,024 × 768 (97 KB)Jml (talk | contribs)Etching of nanostructures in Si using the ICP metal etcher: Sinano4.0 recipe, Run ID 435 and 436, time 90 secs, Cl2 20, 2mtorr, 900/60 coil/platen, 20 degs.

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