Specific Process Knowledge/Etch/DRIE-Pegasus/processA/PrA-2

From LabAdviser
Revision as of 11:31, 28 June 2023 by Jmli (talk | contribs)
(diff) ← Older revision | Latest revision (diff) | Newer revision → (diff)

Feedback to this page: click here


Unless otherwise stated, the content of this page was created by the dry etch group at DTU Nanolab

Process runs
Date Substrate Information Process Information SEM Images
Wafer info Exposed area Conditioning Recipe Wafer ID
2/5-2016 4" Travka20 Wafer 20 % Si 3 minute TDESC clean PrA-2, 80 cycles or 14:40 minutes C03991.03

2/5-2016 4" Travka20 Wafer 20 % Si 3 minute TDESC clean PrA-2, 80 cycles or 14:40 minutes C03991.06

3/6-2016 4" Travka20 Wafer 20 % Si 3 minute TDESC clean PrA-2, 80 cycles or 14:40 minutes C04047.03

3/6-2016 4" Travka20 Wafer 20 % Si 3 minute TDESC clean PrA-2, 80 cycles or 14:40 minutes C04047.06