Specific Process Knowledge/Thin film deposition/TiO2 deposition in Sputter System (Lesker)
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TiO2 Sputtering
This page presents the results of TiO2 deposition using DC reactive sputtering in Sputter-System Lesker, now commonly known as "Old Lesker". The deposition target is Ti, and O2 gas is added as reactive gas. Source #3 (DC) was used.
The fabrication and characterization described below were conducted in 2021 by Evgeniy Shkondin, DTU Nanolab. The prepared samples were investigated by the X-ray Reflectivity method. The focus of the study was the deposition conditions.
The process recipe in a Sputter-System (Lesker) is following:
- Deposition type: DC-R
- Power: 20 W. Such a low power can be used for doping purposes during transparent conducting oxide thin film production (such as doped ZnO or similar). For other applications higher powers are preferable.
- Pressure: 3 mTorr
- Gas: 10% of O2 in Ar
- Deposition time: 28800s which corresponds to 8 hours.
- Temperature: 20°C (no heating)
- Measured DC bias: 322V
- Deposition Rate: 0.00024 nm/s
XRR-measurement
| Layer parameter list | |||||
|---|---|---|---|---|---|
| Layer name | Thickness (nm) | Density (g/cm3) | Rougness (nm) | Delta | Beta |
| Moisture | 0.33 | 2.33 | 1.05 | 7.5913e-6 | 1.7628e-7 |
| TiO2 (sputtered) | 6.99 |
3.62 | 0.31 | 1.1147e-5 | 5.4574e-7 |
| SiO2 (native oxide) | 1.32 | 2.10 | 0.57 | 6.8506e-6 | 1.5908e-7 |
| Si (wafer) | 2.328 | 0.41 | 7.5796e-6 | 1.7601e-7 | |
- XRR analysis of TiO2 thin film.
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X-ray reflectivity. Measurement and Fit.
