Specific Process Knowledge/Etch/AOE (Advanced Oxide Etch)/Si etch using AOE
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Si mask etch
| Parameter | Recipe name: Si_etch | Recipe name: Si_etch2 (optimized by Henri Jansen @nanolab 2018) |
|---|---|---|
| Coil Power [W] | 800 | 800 |
| Platen Power [W] | 30 | 30 |
| Platen temperature [oC] | 20 | 5 |
| C4F8 flow [sccm] | 55 | 65 |
| SF6 flow [sccm] | 75 | 35 |
| Pressure [mTorr] | 20 | 20 |
| Results | Si_etch:Resist mask | Si_etch: Resist mask | Si_etch2: Resist mask | |
|---|---|---|---|---|
| Si etch rate | ~1.12 µm/min - tested by Yunhong Ding @fotonik | ~1.68 µm/min - tested by bghe@nanolab (before nov. 2015) |
0.24 µm/min - tested by Henri Jansen @nanolab (2018) |
|
| Selectivity to photo resist | 1:~2.6 - tested by Yunhong Ding @fotonik | 1:~4 - tested by bghe@nanolab (before nov. 2015) |
1:3 - tested by Henri Jansen @nanolab (2018) | |
| Etch rate in SiO2 | ~0.34 µm/min - tested by Yunhong Ding @fotonik | 0.4 µm/min - tested by bghe@nanolab (before nov. 2015) | ? | |
| Profile [o] | not tested | not tested` | see images | |
| Images | . | . | ||
| Comments | The profile is supposed to be ~88dg but it has not been confirmed | See the work done by Henri Jansen with variation of the C4F8/SF6 ratio: | ||
| Etch rate in silicon rich nitride from furnace B2 | Etched 119nm in 1 min - test by bghe@nanolab October 2015 | . | ? |
Profile images for Si_etch2
Done by Berit bghe@nanolab marts 2020
Initial sample wafer as: Si/SiO2(15µm)/pSi(2µm)/Mir resist(2µm)
Apox1: Si_etch2 10 min (with old resist)
Etch time 10min: all the resist is gone
Apox2: Si_etch2 7 min (with new resist)
Si_etch2 7 min with new resist pattern (2µm)
