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This page is written by Berit Herstrøm @ DTU Nanolab (BGHE) if nothing else is stated

With C4F8 and H2 chemistry (all tests done by Peixiong Shi, DTU Nanolab)

Part 1

		Very good	Very good	Very good	Very good	Very good	Very good	Unstable plasma at 2mtorr	stable plasma at 2.5mtorr	stable plasma at 2.5mtorr
ICP metal etch SiO2 by reist mask try	Date	Feb262013	Feb272013	Feb272013 20:00	Feb272013 23:00	Feb282013 1am	Feb282013 2am	Feb282013 2am	Feb282013 2am	Feb2820134am
	Metal ICP recipe	pxSiO2try5	pxSiO2try6	pxSiO2try7	pxSiO2try8	pxSiO2try8	pxSiO2try8	pxSiO2try9	pxSiO2try9	pxSiO2try9
	Wafer size and ID	6inch, 6A1_feb252013	6inch, 6A4_feb262013	6inch, 6A6_feb262013	6inch, 6A2_feb272013	6inch, 6A3_feb272013	6inch, 6A4_feb272013	6inch, 6A5_feb272013	6inch, 6A5_feb272013	6inch, 6A6_feb272013
	Mask	440nm resist on 62nmBarc on 1800nm apox, first etch barc 20sec by Ox plasma	440nm resist on 62nmBarc on 1800nm apox, first etch barc 20sec by Ox plasma	780nm resist on 62nmBarc on 1800nm apox, first etch barc 20sec by Ox plasma	780nm resist on 62nmBarc on 800nm apox, first etch barc 20sec by Ox plasma	780nm resist on 62nmBarc on 490nm apox, first etch barc 20sec by Ox plasma	Blank Si	780nm resist on 62nmBarc on 490nm apox, first etch barc 20sec by Ox plasma	780nm resist on 62nmBarc on 490nm apox, first etch barc 20sec by Ox plasma	780nm resist on 62nmBarc on 490nm apox, first etch barc 20sec by Ox plasma
	Etch time	2min	4min	4min	4min	5min	4min	1min	4min	5min
	Pressure [mTorr]	6	6	4	3	3	2	2	2.5	2.5
	C4F8 flow [sccm]	0	20	10	8	8	8	8	8	8
	CF4 flow [sccm]	40	0	0	0	0	0	0	0	0
	H2 flow [sccm]	30	20	30	30	30	30	30	30	30
	CH4 flow [sccm]	0	Set 20 real 3.7	Set 20 real 3.7	0	0	0	0	0	0
	Coil Power [W]	800	800	800	800	800	800	800	800 reflect 13W	800 reflect 8W
	Platen Power [W]	100	100	120	150	150	150	150	150	150reflect 0.2w
	Platen temperature [^oC]	20	20	20	20	20	20	20	20	20
	Coil match	60%,27%	63%,25%	63%,25%	67%,24%	67%,24%	68.9%,24.1%	68.9%,24.1%	68.7%,25.3%	68.87%,23.1%
	Platen Match	40%,53%	36%,54%	36%,54%	34%,54%	34%,54%	34.3%,53.8%	34.3%,53.8%	36.8%,54.9%	33.0%,54.4%
	Throde valve opening rate	17%	12%	14%	14.7%	14.7%	14.7%	14.7%	16.2%
	Images	Image1	Images	Images3	Images4	Iamges5	Images6	Images7	Images
	Comments	Profile Very good, 2min etch SiO3 350nm in wafer center, 310nm in wafer, resist etched 260nm	Profile Very good, 2min etch SiO3 350nm in wafer center, 310nm in wafer, resist etched 260nm	Profile Very good, 4min etch SiO3 480nm in wafer center, Resist etched 100nm	Profile Very good, 4min etch SiO3 480nm in wafer center, Resist etched 100nm, side wall 85degree	Profile Very good, 4min etch SiO3 480nm in wafer center, Resist etched 100nm	Plasma very stable on blank Si wafer	Plasma not stable in apox wafer	etched 500nm apox, resit 150n, slide wall 86degm

Part2

ICP metal etch SiO2 by reist mask try	stable plasma at 2.5mtorr	stable plasma at 2.5mtorr
Date	Feb28204am	March012013, 21
Metal ICP recipe	pxSiO2try9	pxSiO2try9
Wafer size and ID	6inch, 6A6_feb272013	6inch, 6A1_march012013
Mask	780nm resist on 62nmBarc on 490nm apox, first etch barc 20sec by Ox plasma	780nm resist on 62nmBarc on 490nm apox, first etch barc 20sec by Ox plasma
Etch time	5min	65min
Pressure [mTorr]	2.5	2.5
C4F8 flow [sccm]	8	8
CF4 flow [sccm]	0	0
H2 flow [sccm]	30	30
CH4 flow [sccm]	0	0
Coil Power [W]	800 reflect 8W	800 reflect 8W
Platen Power [W]	150reflect 0.2w	150reflect 0.2w
Platen temperature [^oC]	20	20
Coil match	68.87%,23.1%	68.87%,23.1%
Platen Match	33.0%,54.4%	33.0%,54.4%
Throde valve opening rate		10.8% to 11.7%, pressure 2.11 to 2.40, not stable
Comments		SiO2 width 230nm

With CF4 and H2 chemistry by Peixiong Shi, DTU Nanolab

Part 1

	bad	bad	bad	bad	bad
Date	Feb122013	Feb122013	Feb122013	Feb122013	Feb122013
Metal ICP recipe	pxSiO2try1	pxSiO2try1	pxSiO2try1	pxSiO2try2	pxSiO2try2
Wafer size and ID	6inch 6A	6inch 6A1_feb112013	6inch, 6A2_feb112013	6inch, 6A3_feb112013	6inch, 6A4_feb112013
Mask	Blank Si dummy test	Blank apox, 3539nm	Blank KRF 347.9nm	Blank KRF 345nm	Blank apox 4623m
Etch time	2min	2min	1min	1min	1min
Pressure [mTorr]	8	8	8	20	20
C4F8 flow [sccm]		20	20	20	20
CF4 flow [sccm]	40	40	40	40	40
H2 flow [sccm]	20	20	20	20	20
Coil Power [W]	800	800	800	800	800
Platen Power [W]	200	200	200	200	200
Platen temperature [^oC]	20	20	20	20	20
Coil match	59%, 27%	59%, 27%	59%, 27%	48%, 29%	48%, 29%
Platen Match	45%, 56%	45%, 56%	45%, 56%	52%, 60%	52%, 60%
Throde valve opening rate	16%	16%	16%	10.7%	10.7%
Etch rate	µm/min	Wf center 238µm/min Wafer edge 230nm/min	Wafer center 170.5nm/min 1cm from wf edge , 204.1nm/min	Wf center 80.4µm/min Wafer edge 119.6nm/min	Wafer center 128.26nm/min, 1cm from wafer edge 123.09nm/min
Distance from wf cent (mm)					Seletivity at cent
Remaining APOX thickness nm		Wf center 3062nm 1cm from wf edge: 3079nm	Wf center nm		Too much polymer in sem
Comments

Part 2

	bad	bad	bad	Very good
ICP metal etch SiO2 by reist mask try	Date	Feb252013	Feb252013	Feb262013
	Metal ICP recipe	pxSiO2try3	pxSiO2try4	pxSiO2try5
	Wafer size and ID	6inch, 6A1_feb252013	6inch, 6A6_feb252013	6inch, 6A1_feb252013
	Mask	980nm resist resist on 62nmBarc on 1190nm apox	780nm resist on 62nmBarc on 492nm apox, first etch barc 20sec by Ox plasma	440nm resist on 62nmBarc on 1800nm apox, first etch barc 20sec by Ox plasma
	Etch time	3min	3min	2min
	Pressure [mTorr]	15	8	6
	C4F8 flow [sccm]	0	0	0
	CF4 flow [sccm]	40	40	40
	H2 flow [sccm]	30	30	30
	Coil Power [W]	800	800	800
	Platen Power [W]	200	200	100
	Platen temperature [^oC]	20	20	20
	Coil match	50%, 30%	59%, 27%	60%,27%
	Platen Match	50%, 57%	44%, 56%	40%,53%
	Throde valve opening rate	10%	13.6%	17%
	Images		Images 2	Images
	Comments	Apox etch 550nm for 3min, side wall angle 71degree	Too much polymer, etch Si too much Etch through 500nm apox, then etch Si 180nm,	Profile Very good, 2min etch SiO3 350nm in wafer center, 310nm in wafer, resist etched 260nm	Low pressure gives better profile, less polymer, however, CF4 etch Si too quick