Specific Process Knowledge/Etch/DRIE-Pegasus/showerheadchange/polySi/Cpoly5

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Unless otherwise stated, all content on this page was created by Jonas Michael-Lindhard, DTU Nanolab


Process runs
Date Substrate Information Process Information SEM Images
Wafer info Mask Material/ Exposed area Tool / Operator Conditioning Recipe Wafer ID Comments
3/12-2014 1/4 6" Wafer with 210 nm oxide and 1800 nm polysilicon CB on oxide carrier standard stepper mask (50 nm barc + 320 nm krf) Si / 50+ % Pegasus/jmli 10 minute TDESC clean + 45 sec barc etch nanolab/jml/showerhead/Cpoly5, 20 cycles or 2:20 minutes S004734 New showerhead