Specific Process Knowledge/Thermal Process/Furnace Noble

Noble Furnace

This furnace is used to grow oxide on metals or dirty wafers and to anneal wafers up to 1000 degree Celsius. The Noble Furnace is located in service room 3.

Overview of the performance of the Noble Furnace

Purpose	Oxide growth, annealing
Performance		25 4" wafers can be processed simultaneously
Process parameter range	Process Temperature	20-1000 oC
	Process pressure	1 atm
	Gasses on the system	POCL$_{3}$
Substrates	Batch size	1-30 4" wafer (or 2" wafers) per run
	Substrate material allowed	Silicon wafers (new from the box or RCA cleaned)