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Specific Process Knowledge/Etch/AOE (Advanced Oxide Etch)/Si etch using AOE

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Revision as of 14:16, 16 November 2010 by BGE (talk | contribs) (New page: =This page is under construction!!!= Si mask etch has been tried out by Yunhong Ding @ Fotonik {| border="2" cellspacing="2" cellpadding="3" !Parameter !Si_etch |- |Coil Power [W] |800...)

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This page is under construction!!!

Si mask etch has been tried out by Yunhong Ding @ Fotonik

Parameter	Si_etch
Coil Power [W]	800
Platen Power [W]	30
Platen temperature [^oC]	20
C $_{4}$ F $_{8}$ flow [sccm]	55
SF $_{6}$ flow [sccm]	75
Pressure [mTorr]	20

Typical results	Resist mask
Si etch rate [nm/min]	~1.12my/min
Selectivity [:1]	~2.6
Profile [^o]	not tested
Images	.
Comments	The profile is supposed to be ~88dg but it has not been confirmed

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