Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/Slow etch
The slow etch
The slow etch is designed to etch slow at low powers to etch thin films and to avoid overheating of samples mounted on a carrier with Capton/polyimide tape
| Parameter | Recipe name: Slow Etch |
|---|---|
| Coil Power [W] | 350 |
| Platen Power [W] | 50 |
| Platen temperature [oC] | 20 |
| He flow [sccm] | 0 |
| CF4 flow [sccm] | 40 |
| Pressure [mTorr] | 4 |
| Typical results | Test Results |
|---|---|
| Etch of Si3N4 with DUV mask | |
| Etch rate of Si3N4 | ~nm/min |
| Etch rate of Silicon | ~nm/min |
| Etch rate of DUV resist] | ~nm/min
|
| Profile [o] |