Specific Process Knowledge/Etch/Aluminum Oxide/Al2O3 Etch with ICP Metal

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Al2O3 etching with the ICP metal

Parameter	Recipe name: no name (testing recipe)
Coil Power [W]	1200
Platen Power [W]	200
Platen temperature [oC]	0
BCl3 flow [sccm]	60
Cl2 flow [sccm]	30
Pressure [mTorr]	4

Material to be etched	Etch rate using the above parameters
Al2O3	~93nm/min (30s, 1/4 wafer on 6" carrier) 2017-01-20 bghe@nanolab

Al2O3 etching by sanvis@nanolab

Parameter	Nanoscale Al2O3 etch	Microscale Al2O3 etch
Coil Power [W]	300	500
Platen Power [W]	15	70
Platen temperature [oC]	0	0
BCl3 flow [sccm]	20	40
Cl2 flow [sccm]	7	15
Pressure [mTorr]	1.2	3.0

Material to be etched	Nanoscale Al2O3 etch	Microscale Al2O3 etch
Etch rate	6.25 nm/min on 6" wafer, Summer sanvis@nanolab	25 nm/min on small samples on Si carrier, Summer sanvis@nanolab

Al2O3 etching by bghe@nanolab

Recipes

Al2O3 etch

Parameter	Recipe 1:Al2O3 etch platen only
BCl3 (sccm)	15
Ar (sccm)	15
Pressure (mTorr)	5
Coil power (W)	0
Platen power (W)	30
Temperature (oC)	20
Spacers (mm)	100 mm

Results

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• Top view after resist strip
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