Specific Process Knowledge/Etch/AOE (Advanced Oxide Etch)/Silicon Nitride Etch using AOE
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Silicon nitride etch with STS recommended silicon nitride recipe
Parameter | Recipe name: SiN_res (SiN etch with resist mask) |
---|---|
Coil Power [W] | 1300 |
Platen Power [W] | 350 |
Platen temperature [oC] | 0 |
He flow [sccm] | 174 |
CF4 flow [sccm] | 40 |
Pressure [mTorr] | 4 |
Typical results | Test Results |
---|---|
Etch of Si3N4 with DUV mask | See images here |
Etch rate of Si3N4 | ~435nm/min (50% etch load) Marts 2016 by bghe@nanolab |
Etch rate of Silicon | ~264nm/min (50% etch load) Marts 2016 by bghe@nanolab |
Etch rate of DUV resist] | ~600nm/min (50% etch load) Marts 2016 by bghe@nanolab
|
Profile [o] | close to 90 degrees see the images |
Small variation of the Silicon nitride etch of the STS recommended silicon nitride recipe - with Cr mask
Done by Anders Simonsen @nbi.dk
Parameter | Recipe name: SiN_AS |
---|---|
Coil Power [W] | 1300 |
Platen Power [W] | 350 |
Platen temperature [oC] | 5 |
He flow [sccm] | 174 |
CF4 flow [sccm] | 40 |
O2 flow [sccm] | 4 |
Pressure [mTorr] | 4 |
Typical results | Test Results |
---|---|
Etch of Si3N4 with Cr mask | See results here: |
Etch rate of Si3N4 | ~420 nm/min Summer 2022 by asimonsen@nbi.ku |
Etch rate of Cr | 1:17, see discussion in the summery |
Profile [o] | close to 90 degrees see the images in the links |
Silicon nitride etch with the standard silicon oxide etch
The standard recipe for oxide etching with photo resist as masking material is called: SiO2_res. It can also be used for nitride etching. The parameters and results so fare are as follows:
Parameter | Recipe name: SiO2_res (SiO2 etch with resist mask) |
---|---|
Coil Power [W] | 1300 |
Platen Power [W] | 200 |
Platen temperature [oC] | 0 |
He flow [sccm] | 174 |
C4F8 flow [sccm] | 5 |
H2 flow [sccm] | 4 |
Pressure [mTorr] | 4 |
Typical results | Test Results |
---|---|
Etch rate of Silicon rich nitride from furnace B2 | 136nm was etched in 1min (whole wafer) - etched in October 2015 by bghe@nanolab |
Etch of Si3N4 with DUV mask | See images here
|
Etch rate of thermal oxide | ~230nm/min (5% etch load) |
Selectivity SiO2 to AZ resist [:1] | ~3 |
Selectivity SiO2 to DUV resist [:1] | ~2.0 - tested May 2013 by Christian Østergaard @nanotech. |
Profile [o] | ~90 |
Silicon nitride etch with lower etch rate
Test of etch in silicon nitride (LPCVD). 105nm nitride had to be removed - it was removed after 1min and 40s with a very small over etch in Si.
Parameter | Recipe name: Nitr_res (Silicon Nitride etch using resist mask) |
---|---|
Coil Power [W] | 700 |
Platen Power [W] | 100 |
Platen temperature [oC] | 0 |
CF flow [sccm] | 5 |
He flow [sccm] | 174 |
H flow [sccm] | 4 |
Pressure [mTorr] | 4 |
Typical results | Resist mask | Resist mask |
---|---|---|
Silicon nitride (LPCVD) etch rate | ~60 nm/min | 99-108 nm/min (LN/BGHE 20130514) |
Selectivity to photo resist [:1] | ? | ~between 2.5 and 4.0 (LN/BGHE 20130512) |
Etch rate in Si | ? | ? |
Etch rate in SiO2 | ? | ? |
Profile [o] | not tested | not tested |
Etch uniforminty over a wafer [o] | not tested | ± 1.1% to ±1.8% (Eric Jensen @nanotech, oct. 2013) |
Images | . | . |
Comments | . | . |