Test data on Cr etch development by Anders Simonsen @NBI.KU

DOE experiments and results made on pattern free samples and samples patterned with UV lithography (SEM images)

Name	Pressure [mTorr]	Coil power [W]	Platen power [W]	Total Flow (Cl2+O2) [sccm]	O2 %	Selectivity	Etch-rate [nm/min]	Side-angle	Corner	Resist-damage	Etch time [s]	Etch depth [nm]	Angle1	Radius1	Angle2
t5	5	300	25	40	25	0.21	49.03	25.5	319.5	1	175	57	28	331	23
t7	15	300	15	40	15	0.61	52.15	12	154.5	1	130	87	14	159	10
t8	5	500	15	40	25	0.4	49.50	39.5	228.5	1	120	101	42	169	37
t4	15	500	25	40	15	0.39	70.80	19.5	201	1	100	82	21	158	18
t2	5	300	25	80	15	0.21	40.54	40.5	262.5	3	185	75	42	274	39
t10	15	300	15	80	25	0.68	58.00	11.5	87	2	120	84	14	70	9
t6	5	500	15	80	15	0.43	49.24	29.5	300	5	145	81	29	362	30
t9	15	500	25	80	25	0.41	80.67	18.5	134.5	2	90	79	20	155	17
t1	10	400	20	60	20	0.35	63.13	17.5	288	2	115	79	20	292	15
t1R	10	400	20	60	20	0.4	57.14	20	186	2	105	100	24	232	16

Recipe	Pressure [mTorr]	Coil power [W]	Platen power [W]	Total Flow Cl2+O2 [sccm]	O2%	Temp	Time [s]	CSAR etch rate [nm/min]	CSAR rate w bond	Etch rate [nm/min]	Selectivity	coil load	coil tune	plat load	plat tune	Comment
test11	15	300	15	40	25.00	20	23	80.87	73	52.17	0.65
test12	20	300	15	30	23.33	20	21	65.71	56	57.14	0.87
test13/laqs	10	300	15	30	23.33	20	28	100.71		42.86	0.43					Default recipe used for Cr etching when unspecified
test14	10	300	15	40	25.00	20	30	88.00		40.00	0.45

nano	5	500	15	60	0.17	10	33	99.00		36.36	0.37	41	52	31	50	With strike pressure
langman	10	500	25	40	0.20	8	21	168.39		57.14	0.34	42	52	35	53	With strike pressure