Specific Process Knowledge/Etch/Wet Silicon Oxide Etch (BHF)/BHF etch rates

PECVD4 (HF SiO2) Oxide [nm/min]

Etch rate in	BHF	5% HF	30% HF	40% HF	BHF with wetting agent
Wet Thermal Oxide [nm/min]	78.191 / 794	24.891	282.851		794
Pyrex [nm/min]	35			3000
TEOS [nm/min]	265	153
PECVD1 (Standard) Oxide [nm/min]	147	87
PECVD3 (LFSiO) Oxide [nm/min]	2253
PECVD4 (Waveguide) Oxide [nm/min]					1055
				2305
Silicon Rich Nitride [nm/min]	0.331	0.601	2.61
Stochiometric Nitride Si3N4 [nm/min]	0.752

¹The measured etch rates have been made and donated by Eric Jensen and Rolf Møller-Nielsen from DTU-Nanotech, October 2013.

²The measured etch rates have been made and donated by Morten Bo Mikkelsen from DTU-Nanotech, March 2013.

³The measured etch rate has been made and donated by Trine Holm Christensen from DTU-Space, January 2015.

⁴The measured etch rate has been made by Rune Christiansen DTU-Nanolab, January 2020.

⁵The measured etch rate has been made by Karen Birkelund DTU-Nanolab, October 2021.