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III-V Oxidation furnace (C2)

The III-V Oxidaiont furnace (C2) is being used on August 2019 for wet oxidation of III-V devices instead of III-V Oven (D4), for instance for lateral oxidation of thin AlGaAs layers to defined apertures in light-limiting diodes.

The furnace is a Tempress horizontal furnace. A Sample is placed on the carrier quartz plate, which always be kept inside the furnace tube, and loaded to the hot furnace that filling with water vapour. The sample get oxidized at the desired time and then the furnace door will automatically open so that the oxidation stops and the sample is ready to be unloaded.

Before use, samples have to be cleaned. A short BHF dip can be used to remove any native oxide which can be difficult to penetrate by a wet thermal oxidation.

Please check the cross contamination information in LabManager before you use the furnace.

The user manual and contact information can be found in LabManager:

III-V Oxidation furnace (C2)

Process knowledge

Standard wet oxidation recipe on the III-V oxidation furnace

Overview of the performance of the III-V oxidation furnace and some process related parameters

Purpose		Wet oxidation of III-V devices
Performance	Lateral oxidation rate	Very sample dependent
Process parameter range	Process temperature	420 ^oC
	Process pressure	1 atm
	Gasses on the system	N₂ (bubbler) N₂
Substrates	Batch size	Several smaller samples (placed vertically on a quartz plate)
Substrates	Substrate materials allowed	III-V devices Silicon