Specific Process Knowledge/Thin film deposition/Deposition of Palladium

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Palladium can be deposited by e-beam evaporation. In the chart below you can compare the different deposition equipment:

	E-beam evaporation (Temescal)	E-beam evaporation (Wordentec)
General description	E-beam deposition of Pd	E-beam deposition of Pd
Pre-clean	Ar ion source	none
Layer thickness	10 Å - 600 nm*	10 Å - 600 nm*
Deposition rate	0.5 Å/s to 10Å/s	2 Å/s to 10Å/s
Batch size	Up to 4x6" wafers Up to 3x8" wafers (ask for holder) smaller wafers and pieces	Up to 6x6" wafers (deposition on one wafer at the time) Up to 6x4" wafers (deposition on one wafer at the time) smaller wafers and pieces
Allowed materials	Silicon oxide Silicon (oxy)nitride Photoresist PMMA Mylar Metals See also the cross-contamination sheet	Silicon oxide Silicon (oxy)nitride Photoresist PMMA Mylar Metals See also the cross-contamination sheet
Comment

* If depositing more than 600 nm, please write to metal@danchip.dtu.dk well in advance to ensure that enough material is present.