Specific Process Knowledge/Thin film deposition/Deposition of Palladium

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Palladium can be deposited by e-beam evaporation. In the chart below you can compare the different deposition equipment:

	E-beam evaporation (Temescal)	E-beam evaporation (Wordentec)
General description	E-beam deposition of Pd	E-beam deposition of Pd
Pre-clean	Ar ion source	RF Ar clean
Layer thickness	10 Å - 1 µm*	10 Å to 200 nm
Deposition rate	0.5 Å/s to 10Å/s	2 Å/s to 10Å/s
Batch size	Up to 4x6" wafers Up to 3x8" wafers (ask for holder) smaller wafers and pieces	1x 2" wafer or 1x 4" wafers or Several smaller pieces
Allowed materials	Silicon oxide Silicon (oxy)nitride Photoresist PMMA Mylar Metals See also the cross-contamination sheet	Silicon oxide Silicon (oxy)nitride Photoresist PMMA Mylar
Comment

* If depositing more than 600 nm, please write to metal@danchip.dtu.dk well in advance to ensure that enough material is present.