File:RIE1 150nitride bgenitr 3.5min.tif
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RIE1 etch profile - 150 nm silicon nitride - recipe "BGE_NITR" (pressure 42 mTorr) - etchtime 3,5 min. The structures are made with e-beam lithography, and the Al etch mask has been removed. Wafer tiltet 45 degrees.
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| Date/Time | Thumbnail | Dimensions | User | Comment | |
|---|---|---|---|---|---|
| current | 10:35, 21 September 2009 |  | 1,024 × 768 (71 KB) | Pvl (talk | contribs) | RIE1 etch profile - 150 nm silicon nitride - recipe "BGE_NITR" (pressure 42 mTorr) - etchtime 3,5 min. The structures are made with e-beam lithography, and the Al etch mask has been removed. Wafer tiltet 45 degrees. |
| 10:24, 21 September 2009 |  | 1,024 × 768 (71 KB) | Pvl (talk | contribs) | RIE1 etch profile - 150 nm silicon nitride - recipe "BGE_NITR" (pressure 42 mTorr) - etchtime 3,5 min. The structures are made with e-beam lithography, and the Al etch mask has been removed. Wafer tiltet 45 degrees. | |
| 10:17, 21 September 2009 | No thumbnail | 1,024 × 768 (769 KB) | Pvl (talk | contribs) | RIE1 etch profile - 150 nm silicon nitride - recipe "BGE_NITR" (pressure 42 mTorr) - etchtime 3,5 min. The structures are made with e-beam lithography, and the Al etch mask has been removed. Wafer tiltet 45 degrees. | |
| 15:03, 7 September 2009 | No thumbnail | 1,024 × 768 (769 KB) | Pvl (talk | contribs) | RIE1 etch profile - 150 nm silicon nitride - recipe "BGE_NITR" (pressure 42 mTorr) - etchtime 3,5 min. The structures are made with e-beam lithography, and the Al etch mask has been removed. Wafer tiltet 45 degrees. |
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