Specific Process Knowledge/Bonding

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For bonding samples to a carrier wafer in order to enable dry etching, please go here.

For bonding samples to a carrier wafer for UV-lithography using automatic coater and developer, please see this process flow: Process_Flow_ChipOnCarrier.docx‎, and refer to the bonding procedure for dry etching.

Choose equipment

• Imprinter 02
• Wafer Bonder 02
• C3 furnace anneal bond

Choose bonding methods in Wafer Bonder 2

• Eutectic bonding
• Fusion bonding
• Anodic bonding

Comparing the three bonding methods in the wafer bonder 2

	Eutectic bonding	Fusion bonding	Anodic bonding
General description	For bonding two substrates by use of an interphase that makes an eutecticum.	For bonding two identical materials.	For bonding Si and Glass.
Bonding temperature	Depending on the eutecticum 310°C to 400°C.	Depending on defects 50°C to 400°C.	Depending on the voltage 300°C to 500°C Standard is 400°C.
Annealing temperature	No annealing	1000°C-1100°C in the anneal bond furnace (C3).	No annealing
Materials possible to bond	Bonding of substrates is done by use of the eutectica Au/Si, Au/Sn and Au/Sn/Ni	Si/Si, SiO2/SiO2	Si/Pyrex (glass)
Substrate size	Up to 4"	Up to 4"	Up to 4"
Cleaning	Cleaning by N2.	Wet chemical cleaning, IMEC.	Cleaning by N2.
Backside alignment	Double side polished wafers.	Double side polished wafers.	Not relevant.