Specific Process Knowledge/Etch/AOE (Advanced Oxide Etch)/Si etch using AOE

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Si mask etch (recipe given by SPTS)

Parameter	Recipe name: Si_etch	Recipe name: Si_etch2 (optimized by Henri Jansen @nanolab 2018)
Coil Power [W]	800	800
Platen Power [W]	30	30
Platen temperature [oC]	20	5
C$_{4}$F$_{8}$ flow [sccm]	55	65
SF$_{6}$ flow [sccm]	75	35
Pressure [mTorr]	20	20

Results	Si_etch:Resist mask	Si_etch: Resist mask	Si_etch2: Resist mask
Si etch rate	~1.12 µm/min - tested by Yunhong Ding @fotonik	~1.68 µm/min - tested by bghe@nanolab (before nov. 2015)	0.24 µm/min - tested by Henri Jansen @nanolab (2018) 0.22-0.28 µm/min- tested by bghe@nanolab (Marts 2020)
Selectivity to photo resist	1:~2.6 - tested by Yunhong Ding @fotonik	1:~4 - tested by bghe@nanolab (before nov. 2015)	1:3 - tested by Henri Jansen @nanolab (2018) 1:1.3 - tested by bghe@nanolab (Marts 2020)
Etch rate in SiO2	~0.34 µm/min - tested by Yunhong Ding @fotonik	0.4 µm/min - tested by bghe@nanolab (before nov. 2015)	?
Profile [o]	not tested	not tested`	see images
Images	.	.
Comments	The profile is supposed to be ~88dg but it has not been confirmed		See the work done by Henri Jansen "Initial Si etches on AOE".
Etch rate in silicon rich nitride from furnace B2	Etched 119nm in 1 min - test by bghe@nanolab October 2015	.	?