Specific Process Knowledge/Etch/AOE (Advanced Oxide Etch)/Si etch using AOE

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Si mask etch (recipe given by SPTS)

Parameter Recipe name: Si_etch Recipe name: Si_etch2 (optimized by Henri Jansen @nanolab 2018)
Coil Power [W] 800 800
Platen Power [W] 30 30
Platen temperature [oC] 20 5
CFailed to parse (SVG (MathML can be enabled via browser plugin): Invalid response ("Math extension cannot connect to Restbase.") from server "https://wikimedia.org/api/rest_v1/":): {\displaystyle _4} FFailed to parse (SVG (MathML can be enabled via browser plugin): Invalid response ("Math extension cannot connect to Restbase.") from server "https://wikimedia.org/api/rest_v1/":): {\displaystyle _8} flow [sccm] 55 65
SFFailed to parse (SVG (MathML can be enabled via browser plugin): Invalid response ("Math extension cannot connect to Restbase.") from server "https://wikimedia.org/api/rest_v1/":): {\displaystyle _6} flow [sccm] 75 35
Pressure [mTorr] 20 20


Results Si_etch:Resist mask Si_etch: Resist mask Si_etch2: Resist mask
Si etch rate ~1.12 µm/min - tested by Yunhong Ding @fotonik ~1.68 µm/min - tested by bghe@nanolab (before nov. 2015)

0.24 µm/min - tested by Henri Jansen @nanolab (2018)
0.22-0.28 µm/min- tested by bghe@nanolab (Marts 2020)

Selectivity to photo resist 1:~2.6 - tested by Yunhong Ding @fotonik 1:~4 - tested by bghe@nanolab (before nov. 2015)

1:3 - tested by Henri Jansen @nanolab (2018)
1:1.3 - tested by bghe@nanolab (Marts 2020)

Etch rate in SiO2 ~0.34 µm/min - tested by Yunhong Ding @fotonik 0.4 µm/min - tested by bghe@nanolab (before nov. 2015) ?
Profile [o] not tested not tested` see images
Images . .
Comments The profile is supposed to be ~88dg but it has not been confirmed See the work done by Henri Jansen Media:ibsen initial si etches on AOE.pdf.
Etch rate in silicon rich nitride from furnace B2 Etched 119nm in 1 min - test by bghe@nanolab October 2015 . ?