Specific Process Knowledge/Etch/AOE (Advanced Oxide Etch)/Si etch using AOE
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Si mask etch (recipe given by SPTS)
Parameter | Recipe name: Si_etch | Recipe name: Si_etch2 (optimized by Henri Jansen @nanolab 2018) |
---|---|---|
Coil Power [W] | 800 | 800 |
Platen Power [W] | 30 | 30 |
Platen temperature [oC] | 20 | 5 |
CFailed to parse (SVG (MathML can be enabled via browser plugin): Invalid response ("Math extension cannot connect to Restbase.") from server "https://wikimedia.org/api/rest_v1/":): {\displaystyle _4} FFailed to parse (SVG (MathML can be enabled via browser plugin): Invalid response ("Math extension cannot connect to Restbase.") from server "https://wikimedia.org/api/rest_v1/":): {\displaystyle _8} flow [sccm] | 55 | 65 |
SFFailed to parse (SVG (MathML can be enabled via browser plugin): Invalid response ("Math extension cannot connect to Restbase.") from server "https://wikimedia.org/api/rest_v1/":): {\displaystyle _6} flow [sccm] | 75 | 35 |
Pressure [mTorr] | 20 | 20 |
Results | Si_etch:Resist mask | Si_etch: Resist mask | Si_etch2: Resist mask | |
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Si etch rate | ~1.12 µm/min - tested by Yunhong Ding @fotonik | ~1.68 µm/min - tested by bghe@nanolab (before nov. 2015) |
0.24 µm/min - tested by Henri Jansen @nanolab (2018) |
|
Selectivity to photo resist | 1:~2.6 - tested by Yunhong Ding @fotonik | 1:~4 - tested by bghe@nanolab (before nov. 2015) |
1:3 - tested by Henri Jansen @nanolab (2018) | |
Etch rate in SiO2 | ~0.34 µm/min - tested by Yunhong Ding @fotonik | 0.4 µm/min - tested by bghe@nanolab (before nov. 2015) | ? | |
Profile [o] | not tested | not tested` | see images | |
Images | . | . | ||
Comments | The profile is supposed to be ~88dg but it has not been confirmed | See the work done by Henri Jansen Media:ibsen initial si etches on AOE.pdf. | ||
Etch rate in silicon rich nitride from furnace B2 | Etched 119nm in 1 min - test by bghe@nanolab October 2015 | . | ? |