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Reproducibility test (effect of chamber conditioning)
An O2 clean was made before each test set. That means before Rep01, Rep03 and Rep05. The recipes were exactly the same, but the etch rate decrease in the time (with changed conditioning we expect).
Process parameters
| Sample number
|
Run number
|
Time
|
Total flow rate
|
Gas ratio
|
Power
|
Pressure
|
CHF3 flow
|
O2 flow
|
SiO2
|
Link to the process log
|
Txt
|
| Thickness before
|
Thickness after
|
etch rate (nm/min)
|
| -
|
Rep01
|
5:41
|
17
|
-
|
100
|
20
|
17
|
0
|
411nm
|
59,81nm
|
61,8nm/min
|
Process log entry [1]
|
|
| -
|
Rep02
|
3:00
|
17
|
-
|
100
|
20
|
17
|
0
|
411nm
|
258,23nm
|
50,92nm/min
|
Process log entry [2]
|
|
Process parameters
| Sample number
|
Run number
|
Time
|
Total flow rate
|
Gas ratio
|
Power
|
Pressure
|
CHF3 flow
|
O2 flow
|
SiO2
|
Link to the process log
|
Txt
|
| Thickness before
|
Thickness after
|
etch rate (nm/min)
|
| -
|
Rep03
|
3:00
|
17
|
-
|
100
|
20
|
17
|
0
|
411nm
|
238,88nm
|
57,37nm/min
|
Process log entry [3]
|
|
| -
|
Rep04
|
3:00
|
17
|
-
|
100
|
20
|
17
|
0
|
411nm
|
256,24nm
|
51,59nm/min
|
Process log entry [4]
|
|
Process parameters
| Sample number
|
Run number
|
Time
|
Total flow rate
|
Gas ratio
|
Power
|
Pressure
|
CHF3 flow
|
O2 flow
|
SiO2
|
Link to the process log
|
Txt
|
| Thickness before
|
Thickness after
|
etch rate (nm/min)
|
| -
|
Rep05
|
3:00
|
17
|
-
|
100
|
20
|
17
|
0
|
411nm
|
232,16nm
|
59,61nm/min
|
Process log entry [5]
|
|
| -
|
Rep06
|
3:00
|
17
|
-
|
100
|
20
|
17
|
0
|
411nm
|
258,07nm
|
50,98nm/min
|
Process log entry [6]
|
|
| -
|
Rep07
|
3:00
|
17
|
-
|
100
|
20
|
17
|
0
|
411nm
|
264,22nm
|
48,93nm/min
|
Process log entry [7]
|
|
Testing the recipe etching a thin oxide with e-beam resist
Thin oxide etch with e-beam mask
Process parameters
| Sample number
|
Run number
|
Time
|
Total flow rate
|
Gas ratio
|
Power
|
Pressure
|
CHF3 flow
|
O2 flow
|
SiO2
|
E-beam resist
|
Selectivity
|
Link to the process log
|
Txt
|
| Thickness before
|
Thickness after
|
etch rate (nm/min)
|
Thickness before
|
Thickness after
|
etch rate (nm/min)
|
| -
|
|
1:00
|
17
|
-
|
100
|
20
|
17
|
0
|
-
|
-
|
50/35
|
-
|
-
|
/12 -
|
~3
|
Process log entry
|
|
| -
|
|
1:00
|
17
|
-
|
100
|
50
|
17
|
0
|
-
|
-
|
0
|
-
|
-
|
-
|
-
|
Process log entry
|
|
| -
|
|
1:00
|
17
|
-
|
100
|
80
|
17
|
0
|
-
|
-
|
-
|
-
|
-
|
-
|
-
|
Process log entry
|
|
