Specific Process Knowledge/Etch/III-V RIE/III V RIE ETCHES/Details SiO2 100

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Conditioning the chamber

An O2 clean was made before each test. The recipes were exactly the same, the also, but the etch rate decrease in the time.

Process parameters

Sample number	Run number	Time	Total flow rate	Gas ratio	Power	Pressure	CHF3 flow	O2 flow	SiO2			Link to the process log	Txt
									Thickness before	Thickness after	etch rate (nm/min)
-	Rep01	5:41	17	-	100	20	17	0	411nm	59,81nm	61,8nm/min	Process log entry [1]
-	Rep02	3:00	17	-	100	20	17	0	411nm	258,23nm	50,92nm/min	Process log entry [2]

Process parameters

Sample number	Run number	Time	Total flow rate	Gas ratio	Power	Pressure	CHF3 flow	O2 flow	SiO2			Link to the process log	Txt
									Thickness before	Thickness after	etch rate (nm/min)
-	Rep03	3:00	17	-	100	20	17	0	411nm	238,88nm	57,37nm/min	Process log entry [3]
-	Rep04	3:00	17	-	100	20	17	0	411nm	256,24nm	51,59nm/min	Process log entry [4]

Process parameters

Sample number	Run number	Time	Total flow rate	Gas ratio	Power	Pressure	CHF3 flow	O2 flow	SiO2			Link to the process log	Txt
									Thickness before	Thickness after	etch rate (nm/min)
-	Rep05	3:00	17	-	100	20	17	0	411nm	232,16nm	59,61nm/min	Process log entry [5]
-	Rep06	3:00	17	-	100	20	17	0	411nm	258,07nm	50,98nm/min	Process log entry [6]
-	Rep07	3:00	17	-	100	20	17	0	411nm	264,22nm	48,93nm/min	Process log entry [7]