Specific Process Knowledge/Lithography/Descum

Descum results

Plasma asher 1

Descum of AZ5214E resist on 50mm silicon wafer. Wafer was placed horisontally in chamber on a 100 mm carier wafer.

Note: Plasma asher was cold before use

Settings Etched Thickness (nm) ashing time (min) Recipe O2 flow N2 flow Power 1 2 5 7 10 10 1 70 70 150 14,2 16,3 47,6 123,2 854,3 862,1 2 500 0 200 8,1 32,9 271,1 495,6 446,2