Specific Process Knowledge/Lithography/Aligners/Aligner: Maskless 02 processing
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Exposure technology
Process Parameters
- 5206E 0.5µm 375nm (fast + quality)
- 5214E 1.5µm 405nm (fast)
- 5214E 1.5µm 375nm (fast)
- MiR 701 1.5µm 405nm (fast)
- MiR 701 1.5µm 375nm (fast + quality)
- nLOF 2020 2µm 375nm (fast + quality)
- Substrate centering + flat alignment test
Exposure dose
Defocus
High Aspect Ratio mode
- Intensity vs. aperture (405nm + 375nm)
- Dose test for 1.5µm MiR (405nm + 375nm)
Writing speed
- Speed vs. area (375nm)
- Online
- Offline
- Speed vs. dose (375nm + 405nm)
Resolution
Substrate centring and flat alignment
During substrate detection, the sample is scanned along the X- and Y-axes, as well as diagonally. From these measurements, the size (diameter) of the substrate is calculated, as well as the stage position matching the center of the substrate. This stage position will be the default origin for the subsequent exposure.
At the end of substrate detection, the sample is scanned twice along the bottom edge (flat), in order to determine the substrate rotation. This angle will be presented in the exposure panel along with the option to expose the design rotated in order to compensate for this angle, i.e. aligned to the flat/edge of the substrate.
Labelling
Alignment
Top Side Alignment
- 4 marks (before final installation)
- Scaling (375nm, high res camera)
Back Side Alignment
Advanced Field alignment (TSA)
- 4 marks, 25 fields (375nm, high res camera)
- Scaling, 10 fields (375nm, high res camera)