Feedback to this page: click here

THIS PAGE IS UNDER CONSTRUCTION

Exposure technology

Process Parameters

5206E 0.5µm 375nm (fast + quality)
5214E 1.5µm 405nm (fast)
5214E 1.5µm 375nm (fast)
MiR 701 1.5µm 405nm (fast)
MiR 701 1.5µm 375nm (fast + quality)
nLOF 2020 2µm 375nm (fast + quality)

Substrate centering + flat alignment test

Exposure dose

Defocus

Writing speed

Speed vs. area (375nm)
- Online
- Offline
Speed vs. dose (375nm + 405nm)

400x400px|thumb|The writing speed of Aligner: Maskless 02 as a function of the exposure dose

The writing speed of Aligner: Maskless 01 as a function of the exposure dose

Resolution

Substrate centring

During substrate detection, the sample is scanned along the X- and Y-axes, as well as diagonally. From these measurements, the diameter of the substrate is calculated, as well as the stage position matching the center of the substrate. This stage position will be the default origin for the subsequent exposure.

Flat alignment

At the end of substrate detection, the sample is scanned twice along the flat (bottom side for chips/plates), in order to determine the substrate rotation. This angle will be presented in the exposure panel along with the option to expose the design rotated in order to compensate for this angle, i.e. aligned to the flat.

High Aspect Ratio Mode

Intensity vs. aperture (405nm + 375nm)
Dose test for 1.5µm MiR (405nm + 375nm)

Alignment

Top Side Alignment

4 marks (before final installation)
Scaling (375nm, high res camera)

Back Side Alignment

Advanced Field alignment

4 marks, 25 fields (375nm, high res camera)
Scaling, 10 fields (375nm, high res camera)