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GaAs/AlGaAs etching using III-V ICP
| Recipe
|
GaAs Etch
|
| Cl2 flow
|
4 sccm
|
| Ar flow
|
12 sccm
|
| Platen power
|
80 W
|
| Coil power
|
700 W
|
| Pressure
|
6 mTorr
|
| Platen chiller temperature
|
20 oC
|
| Results (GaAs Etch)
|
| GaAs etch rate
|
>500 nm/min
|
| Sidewall angle
|
~ 85-90 o
|
| Selectivity (GaAs:Si3N4, GaAs:AlInP)
|
10:1, 5:1
|
| Recipe
|
GaAs_AlGaAs Etch
|
| Cl2 flow
|
20 sccm
|
| N2 flow
|
50 sccm
|
| Platen power
|
100 W
|
| Coil power
|
600 W
|
| Pressure
|
2 mTorr
|
| Platen chiller temperature
|
20 oC
|
| Results (GaAs_AlGaAs Etch)
|
| AlGaAs etch rate
|
>1000 nm/min
|
| Sidewall angle
|
~ 90 o
|
| Selectivity (GaAs:SiO2)
|
30:1
|
| Recipe
|
GaAs_AlGaAs Etch_BCl3
|
| Cl2 flow
|
10 sccm
|
| BCl3 flow
|
10 sccm
|
| Ar flow
|
10 sccm
|
| N2 flow
|
4 sccm
|
| Platen power
|
50 W
|
| Coil power
|
500 W
|
| Pressure
|
1 mTorr
|
| Platen chiller temperature
|
20 oC
|
| Results (GaAs_AlGaAs Etch_BCl3)
|
| GaAs etch rate
|
>750 nm/min
|
| Sidewall angle
|
85-90 o
|
| Selectivity (GaAs:Si3N4, GaAs:AlInP)
|
10:1
|
 Result of GaAs etching with BCl3. Qijiang Ran, DTU Photonics, 2011.
|
