Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/IBSD of SiO2

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Acceptance test for SiO2 deposition (2011) on IBE/IBSD Ionfab 300+)

.	Acceptance Criteria	Acceptance Result 1	Acceptance Result 2
Substrate information	50 mm SSP Si wafer 525 µm thick Supplied by Danchip	100 mm SSP Si wafer 525+-25 µm thick	100 mm SSP Si wafer 525+-25 µm thick
Material to be deposited	SiO2 The purpose of the SiO2 is to be part of a mirror: <br\> 5 quarterwavelength pairs of <br\> SiO2 <br\> TiO2 <br\> Extra quarterwavelength layer of <br\> TiO2 <br\> 5 quarterwavelength pairs of <br\> SiO2 <br\> TiO2 <br\> Design wavelength (for refractive indices and layer thicknesses): 1300nm <br\> The acceptance criteria is set up for the single SiO2 and TiO2 layers. <br\> Five runs in a row for each material.	SiO2	SiO2
Deposition thickness	222nm	~215nm	224nm
Deposition rate	6 nm/min	7.42nm/min +- 0.04nm/min One standard deviation	7.73nm/min Only made once
Thickness uniformity	<+-1%	+-(0.46% +-0.10%)	+-0.45%
Reproducibility	<+-1.5%	+-0.6%	Not measured
Stress	<500MPa	~600MPa	475MPa
Refractive index	.	1.490+-0.004 (stddev wafer to wafer)	1.482+-0.002 (stddev on wafer)

	Recipe 1	Recipe 2
Platen angle	15 degrees	10 degrees
Platen rotation speed	20rpm	20rpm
Ar(N) flow	4 sccm	4 sccm
Ar(dep. source) flow	9 sccm	8 sccm
I(N)	310mA	320mA
Power	675W	700W
I(B)	310mA	280mA
V(B)	1200V	1100V
Vacc(B)	400V	400V
Deposition time	29min	37min

Other results

Roughness of the surface

Measured with the Optical profiler - PSI mode (on one sample from the acceptace test): Sa= 0.6nm

Uniformity and break down voltage by Mathias Engholm 2016-11-29

Mathias made 105.62nm SiO2 on a test silicon wafer and on his sample wafer. The sample wafer had gold/Cr on the surface and that had to be electrically isolated. The uniformity over the wafer of the oxide was 0.19% over 9 points - this is better than he has achieved when oxidizing in a furnace. He anodic bonded the wafer without problems. He measured the breakdown voltage and got 0.82+/+ 0.13 V/nm over 24 points. This is just as good as the oxide from the furnaces. Before his deposition he ran a 20min heat up and 40min dummy deposition to clean the target. This was done with a bright new target and with the small deposition grids mounted.