Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)/TiO2 deposition using ALD2

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Result from acceptance test

TiO2 deposition at 150 C (amorphous TiO2) using TiCl4 and H2O precursors

The test was done with 500 cycles where the growth rate was measured to be 0.0385 nm/cycle.

TiCl4 H2O
Nitrogen flow 150 sccm 200 sccm
Pulse time 0.1 s 0.1 s
Purge time 3.0 s 4.0 s
  • Uniformity profile across 150 mm Si wafer based on 13 measurement points measured with ellipsometer. The values for the grown oxide thickness can be seen in the table below.
    Uniformity profile across 150 mm Si wafer based on 13 measurement points measured with ellipsometer. The values for the grown oxide thickness can be seen in the table below.
Parameter Average Min. Max. Std.Dev %Range
Thickness (nm) 19.27 18.70 19.82 0.34 5.7947
  • AFM measurement roughness 0.209 nm.
    AFM measurement roughness 0.209 nm.

Pernille Voss Larsen, Mikkel Dysseholm Mar and Tanja Amport, DTU Danchip, 2016-2017.

TiO2 deposition at 300 C (anastase TiO2) using TiCl4 and H2O precursors

The test was done with 500 cycles there the growth rate was measured to be 0.0409 nm/cycle.

TiCl4 H2O
Nitrogen flow 150 sccm 200 sccm
Pulse time 0.1 s 0.1 s
Purge time 3.0 s 4.0 s
  • Uniformity profile across 150 mm Si wafer based on 13 measurement points measured with ellipsometer. The measured oxide thickness is also shown in the table below.
    Uniformity profile across 150 mm Si wafer based on 13 measurement points measured with ellipsometer. The measured oxide thickness is also shown in the table below.
Parameter Average Min. Max. Std.Dev %Range
Thickness (nm) 20.46 19.85 21.02 0.35 5.6791
  • AFM measurement roughness 0.641 nm.
    AFM measurement roughness 0.641 nm.

Pernille Voss Larsen, Mikkel Dysseholm Mar and Tanja Amport, DTU Danchip, 2016-2017.

TiO2 on trenches

TiCl4 TiCl4 H2O H2O
Nitrogen flow 150 sccm 150 sccm 200 sccm 200 sccm
Pulse time 0.1 s 0.1 s 0.1 s 0.1 s


Comparinson of TiO2 depositions in ALD2 and ALD1

In October 2018 some TiO2 depositions have been done in ALD2: One deposition of amorphous TiO2 at 150 C (1000 cycles) and one deposition of anatase TiO2 at 350 C (1250 cycles). These depositions parameters have been chosen, because similar depositions earlier have been done in ALD1, and thus it is possible to compare the two machines.

The results can be found in a Power Point presentation: File:TiO2 depositions in ALD2 October 2018.pptx

In ALD2, the TiO2 depositions have been done with a thermal lid mounted between the ALD chamber and the plasma cone to ensure that the temperature in ALD2 is comparable to the temperature in ALD1.

Other references

Since the ALD2 is very similar to the ALD1 if the thermal lid is installed you might want to get further information, which can be found here.

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