XPS analysis of ALD deposited layers

This section assumes that you are familiar with the basic operations of data processing in Avantage. If not, then press HERE and go through this part first. This is an analysis of ALD deposited layers: A silicon wafer has been coated with with 15 nm Al₂O₃, 15 nm of TiO₂ and 16 nm of HfO₂.

Guidelines on data processing

Click HERE to see some general guidelines on data processing in Avantage.

How to get the data used in the example below

The wiki does not allow uploading of *.zip data files so the zipped data file has been renamed to a *.xls file. Therefore, do the following:

Download this File:Experiment 2.xls.
Rename the downloaded file Experiment_2.xls to Experiment_2.zip
Extract to a folder on a local drive (right click and select 'Extract all'). Avantage will not work on network drives.

Data processing

1. Open the experiment and prepare processing grids

Depth profile of ALD layers: Silicon wafer with 15 nm Al₂O₃, 15 nm of TiO₂ and 16 nm of HfO₂