Specific Process Knowledge/Thin film deposition/Deposition of Tantalum

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Revision as of 13:00, 29 August 2018 by Reet (talk | contribs) (Alcatel replaced by Temescal)

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Tantalum can be deposited by e-beam evaporation. In the chart below you can compare the different deposition equipment.


E-beam evaporation (Temescal) Sputter (Lesker)
General description E-beam deposition of Ta

(line-of-sight deposition)

Sputter deposition of Ta

(not line-of-sight)

Pre-clean Ar ion source RF Ar clean
Layer thickness 10Å to 0.6 µm* 10Å to ?
Deposition rate 0.5Å/s to 10Å/s ~0.3Å/s
Batch size
  • Up to 4x6" wafers
  • Up to 3x8" wafers (ask for holder)
  • Many smaller pieces
  • Pieces or
  • 1x4" wafer or
  • 1x6" wafer
Allowed materials
  • Silicon
  • Silicon oxide
  • Silicon nitride
  • Silicon (oxy)nitride
  • Photoresist
  • PMMA
  • Mylar
  • SU-8
  • Metals
  • Carbon
Comment As of August 2018, Mo has not yet been deposited in the Temescal.

Please contact the Thin Film group to develop a process.

* If depositing more than 600 nm in total, write to metal@danchip.dtu.dk well in advance to ensure enough material is present.

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