Specific Process Knowledge/Etch/DRIE-Pegasus/DUVetch/polySOI10

Process runs

Date	Substrate Information				Process Information				SEM Images
	Wafer info	Mask	Material/ Exposed area	Tool / Operator	Conditioning	Recipe	Wafer ID	Comments
6/5-2013	1/4 1/4 6" ELK stitching 11/1-2013 CB on oxide carrier	standard stepper mask (50 nm barc + 320 nm krf)	Si / 50%+	Pegasus / jmli	3min TDESC clean + 30 sec barc etch	polySOI5 , 50 cycles or 6:15 minutes	S003472
16/7-2013	1/4 6" ELK stitching 11/1-2013 CB on oxide carrier	standard stepper mask (50 nm barc + 320 nm krf)	Si / 50%+	Pegasus/jmli	3 minute TDESC clean + 30 second barc etch	jml/SOI3/polySOI-10: 50 cycles or 6:15 minutes	S003614	lsh: c4f8 etch -> 20
23/8-2013	1/4 6" tigre 400 nm pitch pattern CB on oxide carrier	standard stepper mask (50 nm barc + 320 nm krf)	Si / 50 % in 20*20 mm squares	Pegasus / jmli	10 minute TDESC clean + 30 second barc etch	jml/SOI3/polySOI-10: 100 cycles or 12:30 minutes	S003695
15/5-2014	6" DUV Lithography test pattern	standard stepper mask (50 nm barc + 320 nm krf)	Si / 50 % in 20*20 mm squares	Pegasus / jmli	10 minute TDESC clean + 30 second barc etch	jml/SOI3/polySOI-10: 50 cycles or 6:15 minutes + 2 mins gentle PR strip	S004031
28/8-2014	6" DUVboxA wafer	standard stepper mask (50 nm barc + 320 nm krf)	Si / 50%+	Pegasus / jmli	30 sec barc etch	SOI4\polySOI-10 , 70 cycles or 8:45 minutes	S004289
28/8-2014	6" DUVboxB wafer	Si/200nm Oxide/1800 nm poly / standard stepper mask (50 nm barc + 320 nm krf)	poly / 50%+	Pegasus / jmli	75 sec barc etch	SOI4\polySOI-10 , 20 cycles or 2:30 minutes	S004289
28/8-2014	6" DUVboxB wafer	Si/200nm Oxide/1800 nm poly / standard stepper mask (50 nm barc + 320 nm krf)	poly / 50%+	Pegasus / jmli	0 sec barc etch	SOI4\polySOI-10 , 30 + 10 cycles or 5:00 minutes	S004291 (two processes)	S004289 reprocessed, probably overetched -> no spikes