Specific Process Knowledge/Etch/III-V ICP/InP-InGaAsP-InGaAs

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InP/InGaAsP/InGaAs etch

Unselective etch for large sized features and small aspect ratios by David Larsson, DTU Photonics, 2011

Recipe	InP Etch 1/InP Precond 1
Cl2 flow	20 sccm
N2 flow	40 sccm
Ar flow	10 sccm
Platen power	100 W
Coil power	500 W
Pressure	2 mTorr
Platen chiller temperature	180 oC

Results (InP Etch 1)
Etch rate	500-600 nm/min
Sidewall angle	86-87 o
Selectivity (InP:SiO2, InP:HSQ)	50:1

• Result of InP etching. David Larsson, DTU Photonics, 2011
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InP etching June 2018

With InP piece on Si carrier

InP piece patterned with SiO2. The pice was etched on topof a Siwafer with out bonding. The InP etch was used.

• Result of InP etching.
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