LabAdviser/Technology Research/Organic Ice Resists for Electron-Beam Lithography - Instrumentation and Processes/Electron-Beam Lithography on Organic Ice Resists
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Electron-Beam Lithography on Organic Ice Resists
Overview
Resist thickness ranged between 7 nm up to 2 µm, with best results obtained for films around 20-200 nm, deposited in 5-10 min.
Critical dose was dependent on acceleration voltage and OIR, with the lowest observed at 3 mC/cm2 for nonane OIR exposed at 5 keV. The resolution achievable with the SEM LEO was limited to above 50 nm due to vibrations in the column and stage; still, an alternative cryo-ETEM setup at DTU Cen was developed from the project confirming sub-10 nm resolution.
A variety of sample geometries was tested in the SEM tool, as small as 2 mm in size and as thin as 5 nm membranes. Their patterning could be accommodated at no added effort, as with IL.
Organic Ice Resists
Contrast Curve
Multi-layers
The unique patterning setup (all-in-one) allowed complex in-situ deposition strategies. EBL routines for multi-layer and three-dimensional structuring were demonstrated. This opened up a wide range of possible directions to pursue in the future with this technique.