Specific Process Knowledge/Characterization/Measurement of film thickness and optical constants

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Measurement of Film Thickness and Optical Constants

Thickness measurement of thin films can be done by optical measurement methods. At DANCHIP we have two techniques for this: Ellipsometry (ellipsometer) and Reflectivity measurement (FilmTek+Optical Profiler). If the thin film is not transparent for light then you must find another way to measure the thickness. You can ex. etch a pattern down to the next layer or substrate and then measure the etch step by profilometry. See description further down.

Measurement if the optical constants of a thin film is measured together with the thickness of the film either by ellipsometry (using the ellipsometer),or by refraction (using the FilmTek).


Comparison of the different metodes

FilmTek 4000 Ellipsometer Optical Profiler Etch/stylus metod
Generel description Thin films up to 250 µm, Especially good for thick thin films and for wafer mapping Good for very thin films down to a few Å Thin films up to 20µm, especially good for measuring in a small point (down to 4µm) Technique for thickness measurement for non-transparent films
Method Reflection Ellipsometry Reflection Etch combined with stylus profiling
Film thickness range <250 µm (for silicon oxides > ~75nm, thinner layer can be measured using the UV light source) 20 Å to ~2µm (for silicon oxide) ~30nm-20µm (down to 10nm when using the base without the microscope) ~100nm-several micrometers
Film thickness accuracy Very dependent of how good the model fits (if the fit is good it could be within 1% for a single layer) Very dependent of how good the model fits. Very dependent of how good the model fits.(Not so good fitting posibility) Depends on how good the end-stop works
Index range not any limits not any limits not any limit No index measurement
Index accuracy not known not known not know not relevant
Wavelength range 400-1000 nm (with UV source down to 250nm) 210-1690 nm 350-950 nm Not relevant
What kind of thin films can be measured Any film that is transparent to the light in the given wavelength range

ex:

  • Silicon Oxide
  • Silicon nitride
  • PolySilicon
  • Photoresists
  • SU8
  • Other polymers
  • Very thin layers of metals
  • and many more
Any film that is transparent to the light in the given wavelength range

ex:

  • Silicon Oxide
  • Silicon nitride
  • Very thin layers of PolySilicon
  • Photoresists
  • SU8
  • Other polymers
  • Very thin layers of metals (<20 nm)
  • and many more
In principle any film that is transparent to the light in the given wavelength range. It is limited by the refractive index files in the software and only one model (Cauchy)

ex:

  • Silicon Oxide
  • Silicon nitride
  • PolySilicon
  • Photoresists
  • Other polymers
  • Very thin layers of metals (<20 nm)
  • and many more
  • In principle any that can be etched and stoped without overetching in the under laying material
Substrate size
  • small samples (at least 3mmx3mm)
  • 50 mm wafers
  • 100 mm wafers
  • 150 mm wafers (any sample size below 150mmx150mm
  • larger samples might also be possible, please ask
  • small samples (smallest spotsize 125µm)
  • 50 mm wafers
  • 100 mm wafers
  • 150 mm wafers (any sample size below 150mmx150mm
  • larger samples might also be possible, please ask
  • small samples (at least 3mmx3mm)
  • 50 mm wafers
  • 100 mm wafers
  • 150 mm wafers (any sample size below 150mmx150mm
  • larger samples might also be possible, please ask
Limited by the etching method and the stylus profling instrument.
Allowed materials
  • All materials - some needs a carrier - see the manaul for instructions
  • All materials
  • All materials
  • Any material that can/may be etched and allowed that chosen etch equipment/bath


Film thickness measurement of Polysilicon film (non-transparent >~4µm): Etch + profilometry method

Can be used to find the thickness for a polysilicon layer on top of a silicon oxide layer. This will however etch away part of the polysilicon layer so you need to use a test wafer.

Procedure:

  • Etch the polySi away on ½ the wafer in one of the RIE2:
    • Place the wafer on a 4" Al-carrier.
    • Place ½ a silicon wafer on top.
    • Put on the Al-carrier ring to make sure the ½ silicon wafer does not fall off.
    • Transfer it to the RIE chamber.
    • Select the a Si etch recipe (ex. OH_PolyA, make sure the etch time is long enough).
    • Start the etch.
    • Watch the end point.
    • When the end point occures about the recipe.
    • Take out the wafer.
  • Measure the etch step in one of the profilers.