Specific Process Knowledge/Thin film deposition/ALD Picosun R200/HfO2 deposition using ALD
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The ALD temperature window for HfO2 is 150 - 300 oC. The TEMAHf precursor is heated to 125 oC (TE210) and the heater (TE211 max.) is set to 140 oC during deposition. Remember to set the values in the "MANUAL" tab and to change them to back after deposition (TE211 max. to 1 oC). These values may not be exceeded to prevent precursor decomposition. Due to the heating of the precursor the stabilization time needs to be set to 60 min. Else an alarm (TE210 PID limit exceeded while pulsing) will be triggered and the process will be stopped after the first pulsing attempt.
HfO2 standard recipe
HfO2 deposition using TEMAHf and H2O precursors
The test was done with 300 cycles at 250 oC where the growth rate was measured to be 0.0827 nm/cycle. The precursor temperature (T210) for TEMAHf was 125 oC.
The following tables show the recipe and boost settings for the TEMAHf precursor:
| TEMAHf | H2O | |
|---|---|---|
| Nitrogen flow | 150 sccm | 120 sccm |
| Pulse time | 1.6 s | 0.1 s |
| Purge time | 8.0 s | 4.0 s |
| Boost flow | 500 sccm |
|---|---|
| Pre-empty | 0.5 s |
| Master fill | 1.2 s |
| Post-empty | 0 s |
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Uniformity profile across 150 mm Si wafer based on 52 measurement points measured with ellipsometer. The values for the grown oxide thickness can be seen in the table below.
| Parameter | Average | Min. | Max. | Std.Dev | %Range |
|---|---|---|---|---|---|
| Thickness (nm) | 24.83 | 24.05 | 27.13 | 0.68 | 12.38 |
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AFM measurement roughness 0.3784 nm.
The XPS measurement was made by our XPS-ThermoScientific and shows that the film is purely HfO2 except for some impurities on the surface.
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Atomic percentage distribution of a depth profile.
Tanja Amport, Pernille Voss Larsen and Mikkel Dysseholm Mar, DTU Danchip, 2017.