Specific Process Knowledge/Thin film deposition/ALD Picosun R200/HfO2 deposition using ALD

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The ALD temperature window for HfO2 is 150 - 300 ^oC. The TEMAHf precursor is heated to 120 or 125 ^oC (TE210) and the heater (TE211 max.) is set to 140 ^oC during deposition. Remember to set the values in the "MANUAL" tab and to change them to back after deposition (TE211 max. to 1 ^oC). These values may not be exceeded to prevent precursor decomposition. Due to the heating of the precursor the stabilization time needs to be set to 60 min. Else an alarm (TE210 PID limit exceeded while pulsing) will be triggered and the process will be stopped after the first pulsing attempt.

HfO₂ standart recipe

HfO₂ deposition using TEMAHf and H₂O precursors

The test was done with 300 cycles at 250 ^oC where the growth rate was measured to be 0.0827 nm/cycle. The precursor temperature (T210) for TEMAHf was 125 ^oC.

The following tables show the recipe and boost settings for the TEMAHf precursor:

	TEMAHf	H2O
Nitrogen flow	150 sccm	120 sccm
Pulse time	1.6 s	0.1 s
Purge time	8.0 s	4.0 s

Boost flow	500 sccm
Pre-empty	0.5 s
Master fill	1.2 s
Post-empty	0 s

• 
  Uniformity profile across 150 mm Si wafer based on 52 measurement points measured with ellipsometer. The values for the grown oxide thickness can be seen in the table below.

Parameter	Average	Min.	Max.	Std.Dev	%Range
Thickness (nm)	24.83	24.05	27.13	0.68	12.38

• 
  AFM measurement roughness 0.3784 nm.

Tanja Amport, Pernille Voss Larsen and Mikkel Dysseholm Mar, DTU Danchip, 2017.