Specific Process Knowledge/Thin film deposition/ALD Picosun R200/HfO2 deposition using ALD
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The ALD temperature window for HfO2 is 150 - 300oC. The TEMAHf precursor is heated to 120 or 125oC (T210) and the heater (T211) is set to 140 oC during deposition. Remember to set the values in the "MANUAL" tab and to change them to back after deposition. These values may not be exceeded to prevent precursor decomposition. Due to the heating of the precursor the stabilization time needs to be set to 60 min. Else an alarm will be triggered and the process will be stopped after the first pulsing attempt.
HfO2 standart recipe
HfO2 deposition using TEMAHf and H2O precursors
The test was done with 300 cycles at 250 oC where the growth rate was measured to be 0.0827 nm/cycle. The precursor temperature (T210) for TEMAHf was 125oC.
The following tables show the recipe and boost settings:
| TEMAHf | H2O | |
|---|---|---|
| Nitrogen flow | 150 sccm | 120 sccm |
| Pulse time | 1.6 s | 0.1 s |
| Purge time | 8.0 s | 4.0 s |
| Boost flow | 500 sccm |
|---|---|
| Pre-empty | 0.5 s |
| Master fill | 1.2 s |
| Post-empty | 0 s |
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Uniformity profile across 150 mm Si wafer based on 52 measurement points measured with ellipsometer. The values for the grown oxide thickness can be seen in the table below.
| Parameter | Average | Min. | Max. | Std.Dev | %Range |
|---|---|---|---|---|---|
| Thickness (nm) | 24.83 | 24.05 | 27.13 | 0.68 | 12.38 |
Tanja Amport, Pernille Voss Larsen and Mikkel Dysseholm Mar, DTU Danchip, 2017.