Specific Process Knowledge/Thin film deposition/ALD Picosun R200/HfO2 deposition using ALD

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The ALD temperature window for HfO2 is 150 - 300oC. The TEMAHf precursor is heated to 120 or 125oC (T210) and the heater (T211) is set to 140 oC during deposition. Remember to set the values in the "MANUAL" tab and to change them to back after deposition. These values may not be exceeded to prevent precursor decomposition.

HfO2 standart recipe

HfO2 deposition using TEMAHf and H2O precursors

The test was done with 300 cycles at 250 oC where the growth rate was measured to be 0.0827 nm/cycle. The precursor temperature (T210) for TEMAHf was 125oC.

The following tables show the recipe and boost settings:

TEMAHf H2O
Nitrogen flow 150 sccm 120 sccm
Pulse time 1.6 s 0.1 s
Purge time 8.0 s 4.0 s
Boost flow 500 sccm
Pre-empty 0.5 s
Master fill 1.2 s
Post-empty 0 s
Parameter Average Min. Max. Std.Dev %Range
Thickness (nm) 24.83 24.05 27.13 0.68 12.38

Tanja Amport, Pernille Voss Larsen and Mikkel Dysseholm Mar, DTU Danchip, 2017.